標題: 富銦之氮化鋁銦薄膜成長與性質
Growth and Properties of In-Rich AlInN Films
作者: 張立
CHANG LI
國立交通大學材料科學與工程學系(所)
關鍵字: 氮化鋁銦;分子束磊晶;薄膜成長;InAlN;molecular beam epitaxy;thin film growth
公開日期: 2010
摘要: AlInN 是新興之氮化物半導體材料,富銦之AlxIn1-xN(x<0.4)之能隙小於2eV,可成為新世 代太陽能電池之材料之一。本計劃擬以電漿輔助有機金屬分子束磊晶法(MOMBE)沉積 高品質Al0.4In0.6N 磊晶薄膜於在(0001)sapphire、(0001)GaN/sapphire、Si(110)、YSZ(111) [yttria-stabilized zirconia]四種基板,並經由X 光繞射、電子顯微鏡等材料分析了解薄膜 之微觀結構及成長機制,並測量其光電性質,探討其跟微觀結構之關係。最後,根據 薄膜結構與特性,評估應用於太陽能電池之潛力。
AlInN is a new type of III-nitride semiconductors. In-rich AlxIn1-xN alloys (x<0.4) can have bandgap smaller than 2 eV, which will be very useful for the next generation semiconductor materials for solar cells. This proposal will use metal-organic molecular beam epitaxy method to grow high-quality Al0.4In0.6N epitaxial films on substrates of (0001)sapphire、 (0001)GaN/sapphire、Si(110)、YSZ(111) [yttria-stabilized zirconia]. Film microstructure will be characterized mainly by x-ray diffraction and electron microscopy, and growth mechanism will be explored. Optical and electrical properties also will be measured, and their relationships with film structure will be examined as well. Finally, application of Al0.4In0.6N films for solar cells will be evaluated based on the results of film structure and properties.
官方說明文件#: NSC99-2221-E009-111
URI: http://hdl.handle.net/11536/99932
https://www.grb.gov.tw/search/planDetail?id=2144241&docId=344949
顯示於類別:研究計畫


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  1. 992221E009111.PDF