Title: Improving dielectric loss and thermal stability of CaCu(3)Ti(4)O(12) thin films by adding BST layer
Authors: Lee, Shean-Yih
Chiou, Bi-Shiou
Innovative Packaging Research Center
Department of Electronics Engineering and Institute of Electronics
Innovative Packaging Research Center
Issue Date: 1-Jan-2008
Abstract: The effects of adding a Ba(0.5)Sr(0.5)TiO(3) (BST) seeding layer of perovskite-based oxide CaCu(3)Ti(4)O(12) (CCTO) thin films grown on Pt/TiN/SiO(2)/Si (100) substrates on crystallographic structure, surface morphology, dielectric loss, leakage current, and thermal stability were investigated. Adding a BST seeding layer to the interface between CCTO/Pt structures has remarkable influences on CCTO thin-film properties, including dielectric properties, insulating characteristics, and the temperature coefficient of capacitance (TCC), as well as thin-film grain sizes. CCTO films with a 2 nm BST seeding layer showed smaller grain sizes than those specimens of CCTO films without a BST seeding layer. The dielectric loss, leakage current density, surface roughness, and thermal stability (TCC) of CCTO films with a 2 nm BST seeding layer were improved by about 23%, 1 order of magnitude at 360 kV/cm, 38%, and 61%, respectively, compared with that of CCTO films without a BST seeding layer. The correlations of material properties, such as dielectric loss, leakage current, surface roughness, and thermal stability properties, suggest that adding a 2 nm BST seeding layer to CCTO films capacitor structure is another optimal choice for metal-insulator-metal device applications. (C) 2008 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.2837640
ISSN: 1099-0062
DOI: 10.1149/1.2837640
Volume: 11
Issue: 4
Begin Page: H92
End Page: H95
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