標題: Electrical characteristics of the HfAlON gate dielectric with interfacial UV-ozone oxide
作者: Chen, Yung-Yu
Fu, Wen-Yu
Yeh, Ching-Fa
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: HfAlON;high-k dielectric;ozone oxide
公開日期: 1-Jan-2008
摘要: In this letter, the electrical properties of a HfAlON dielectric with UV-O-3 interfacial oxide were comprehensively studied and then compared with those of a HfAlON dielectric with interfacial chemical oxide. In the comparison of dielectric characteristics including leakage current density, transconductance, subthreshold swing, saturation drain current, effective electron mobility, and constant voltage stress reliabilities, the results clearly indicate that high-density interfacial UV-O-3 oxide is beneficial in reducing both bulk and interface traps as well as diminishing stress-induced trap generation, and possesses a high potential to be integrated with further high-k. dielectric applications.
URI: http://dx.doi.org/10.1109/LED.2007.911977
http://hdl.handle.net/11536/9971
ISSN: 0741-3106
DOI: 10.1109/LED.2007.911977
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 1
起始頁: 60
結束頁: 62
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