Title: InAs channel-based quantum well transistors for high-speed and low-voltage digital applications
Authors: Kuo, Chien-I
Hsu, Heng-Tung
Chang, Edward Yi
Department of Materials Science and Engineering
Issue Date: 2008
Abstract: High-performance indium arsenic (InAs) channel-based quantum well field-effect transistors (QWFETs) have been fabricated. A superior drain-source current density of 1015 mA/mm was achieved, with a high transconductance of 1900 mS/mm when the drain (V(DS)) was biased at 0.5 V. The current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) were extracted to be 393 and 260 GHz, respectively. A very low gate delay of 0.54 ps was also achieved at a 0.5 V drain bias. Compared to a silicon n-channel metal-oxide semiconductor field-effect transistor, the QWFETs exhibited a better radio-frequency performance with lower dc power consumption, which indicates the great potential for high-speed and low-voltage digital applications. (C) 2008 The Electrochemical Society.
URI: http://hdl.handle.net/11536/9925
ISSN: 1099-0062
DOI: 10.1149/1.2917808
Volume: 11
Issue: 7
Begin Page: H193
End Page: H196
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