Title: Effects of growth temperature on solid incorporation of AlAs1-xSbx using tertiarybutylarsine as arsenic source precursor
Authors: Chen, WK
Ou, JH
Hsu, CH
National Chiao Tung University
Department of Electrophysics
Keywords: MOCVD;AlAsSb;incorporation efficiency
Issue Date: 1-Oct-1996
Abstract: We have investigated the effects of growth temperature on the solid incorporation of AlAsSb epilayers grown LJ metalorganic vapor-phase epitaxy using TMAl, TBAs and TMSb as source precursors. The solid incorporation of AlAsSb was found to be strongly affected by the pyrolysis reactions and kinetics of the source precursors, in particular, TMAl and TBAs. Our experimental results indicated that the, Al incorporation efficiency increases with the growth temperature and saturates at temperatures above similar to 625 degrees C. On the other hand, the growth behavior of As is anomalous: the As incorporation efficiency increases initially with growth temperature, and decreases monotonously at temperatures above similar to 550 degrees C. The reduced As incorporation efficiency at high temperatures may be closely related to the beta-elimination process of TBAs, and to the formation of adducts in the gas phase.
URI: http://hdl.handle.net/11536/992
ISSN: 0021-4922
Volume: 35
Issue: 10A
Begin Page: L1234
End Page: L1237
Appears in Collections:Articles