Title: 偏壓法於非導體基材成長磊晶鑽石之研究(II)
Epitaxial Growth of Diamond on Nonconductive Substrates by Biasing Enhanced Method(II)
Authors: 張立
CHANG LI
交通大學材料科學與工程研究所
Keywords: 磊晶;鑽石;Epitaxial growth;Diamond
Issue Date: 2000
Gov't Doc #: NSC89-2216-E009-006
URI: http://hdl.handle.net/11536/99028
https://www.grb.gov.tw/search/planDetail?id=536593&docId=98403
Appears in Collections:Research Plans


Files in This Item:

  1. 892216E009006.pdf