標題: Enhancement of charge-storage performance in Ni-silicide nanocrystal devices by thermal annealing a Ni-Si-N thin film
作者: Chen, Wei-Ren
Chang, Ting-Chang
Yeh, Jui-Lung
Chang, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2008
摘要: The stored charge characteristics of Ni-silicide nanocrystals embedded in nitride formed by annealing a Ni-Si-N thin film were studied in this paper. We used X-ray photoelectron spectroscopy, leakage current density, and X-ray diffraction to offer chemical material analysis of nanocrystals with surrounding dielectric and the crystallization of nanocrystals for different thermal annealing treatments. Transmission electron microscope analyses revealed nanocrystals embedded in the nitride layer. Nonvolatile Ni-Si nanocrystal memories with 600 degrees C annealing revealed superior electrical characteristics for charge-storage capacity and reliability compared with the memories with 300 and 500 degrees C annealing. In addition, we used energy-band diagrams to explain the significance of surrounding dielectric for reliability. (C) 2008 The Electrochemical Society.
URI: http://hdl.handle.net/11536/9902
http://dx.doi.org/10.1149/1.2971189
ISSN: 0013-4651
DOI: 10.1149/1.2971189
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 155
Issue: 11
起始頁: H869
結束頁: H872
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