標題: Triangular extended microtunnels in GaN prepared by selective crystallographic wet chemical etching
作者: Huang, Hsin-Hsiung
Wu, Pei-Lun
Zeng, Hung-Yu
Liu, Po-Chun
Chi, Tung-Wei
Tsay, Jenq-Dar
Leea, Wei-I
電子物理學系
Department of Electrophysics
公開日期: 2008
摘要: Extended microtunnels with triangular cross sections in thick GaN films were demonstrated using wet chemical etching on specially designed epitaxial lateral overgrowth structures. For tunnels along the < 1 (1) over bar 00 > and < 11 (2) over bar0 > directions of GaN, the {11 (22) over bar} and {10 (11) over bar} facets are the etch stop planes with activation energies of 23 kcal/mol determined by wet chemical etching. The axial etching rate of the tunnels in the < 1 (1) over bar 00 > direction is twice as large than that along the < 11 (2) over bar0 > direction. The highest etching rate of the tunnels in the axial direction is 1000 mu m/h. (C) 2008 The Electrochemical Society.
URI: http://hdl.handle.net/11536/9897
http://dx.doi.org/10.1149/1.2913151
ISSN: 0013-4651
DOI: 10.1149/1.2913151
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 155
Issue: 7
起始頁: H504
結束頁: H507
顯示於類別:期刊論文


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