|標題:||Luminance enhancement of flip-chip light-emitting diodes by geometric sapphire shaping structure|
|作者:||Lee, C. E.|
Kuo, H. C.
Lee, Y. C.
Tsai, M. R.
Lu, T. C.
Wang, S. C.
Kuo, C. T.
Department of Photonics
|關鍵字:||flip-chip light-emitting diodes (FC-LEDs);geometric sapphire shaping;oblique sidewall;sapphire wet etching|
|摘要:||The flip-chip light-emitting diodes (FC-LEDs) with geometric sapphire shaping structure were investigated. The sapphire shaping structure was formed on the. bottom side of the sapphire substrate by a chemical wet etching technique for light extraction purpose. The crystallography-etched facets were (1010) M-plane, (1102) R-plane, and (1120) A-plane against the (0001) c-axis with the angles range between 29 degrees similar to 60 degrees. These large slope oblique sidewalls are useful for light extraction efficiency enhancement. The light-output power of sapphire shaping FC-LEDs was increased 55% (at 350-mA current injection) compared to that of conventional FC-LEDs.|
|期刊:||IEEE PHOTONICS TECHNOLOGY LETTERS|
|Appears in Collections:||Articles|
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