Coupled Quantum and Electro-Mechanical Phenomena in Semiconductor Based Nano-Hybrids
|關鍵字:||偶合問題;半導體;混和奈米體;coupled problems;semiconductor;hybrid nano-objects|
Recent advances in lithography, colloidal chemistry, and epitaxial growth techniques have made it possible to produce semiconductor based nano-hybrids containing material components with different physical properties, such as core-shell quantum dots, metal-semiconductor nano-hybrids, magnetic-functionalized nano-rods, etc., The nano-hybrids opened up a very promising domain for new urgent applications in modern optics, nano-biology, nano-medicine, quantum information technology, etc. Semiconductor components of the hybrids control quantum properties and metallic counterparts offer very large polarizabilities. The mutual interactions between the counterparts lead to strong nonlinear effects. The effects manifest unique opportunity to explore and use the interplay between quantum mechanics, nano-electro-mechanics, and electrodynamics. This is an important signature of the coupled phenomena’s ubiquity in the nano-hybrids. Strong non-linear interactions between the ionic and electronic sub-systems in nano-hybrids can generate the self-consistent inverse effects – the ionic subsystem reconfigurations and transformations. Few very recently discovered phenomena are suggested as intriguing realizations of the coupled direct and inverse quantum and electro-mechanical effects. Unfortunately, the corresponding knowledge is particularly weak and no comprehensive theories, models, or a thorough description of the quantum inverse electro-mechanical effects can be found in literature. It is the central aim of this project to fill the gap for this emergent research field. The inverse multi-physics coupled problem formulation and development of a computational technique for the problem solution will be put in first place in this theoretical study on semiconductor based nano-hybrids. We recently developed two efficient computational methods: the hybrid multiscale method and the mapping method with which we are able in a very efficient computational manner to obtain the energy states and wave functions of electrons and holes confined in semiconductor nano-objects with very sophisticated and flexible shapes, strain and material contents, and, then, to simulate and analyze quantum, electrical, magnetic, and electro-mechanical characteristics of the objects. On the base of that, in this project we plan to build a robust theoretical basement to the description of the quantum inverse electro-mechanical and similar effects in semiconductor based nano-hybrids. This requires addressing both fundamental and applied issues. In this framework three aspects will obtain our attention: proper formulation of the coupled physical and mathematical models of multi-component nano-hybrids and derivation of a computational technique for findings fully self-consistent solutions of the coupled non-linear 3D Schrödinger–Poisson–Navier equations including polaron and inverse pieso-electric effects; detailed analysis of the geometrical and physical characteristics of semiconductor based nano-hybrids in order to determine optimal conditions and systems for the inverse quantum electromechanical effect realizations; formulation of propositions for further applications of the effects.