標題: Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range
作者: Yang, Hung-Pin D.
Hsu, I. -Chen
Lai, Fang-I.
Lin, Gray
Hsiao, Ru-Shang
Kuo, Hao-Chung
Chi, Jim Y.
交大名義發表
National Chiao Tung University
關鍵字: InGaAs;photonic-crystal;sub-monolayer;quantum-dot;VCSEL
公開日期: 2008
摘要: We have made InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting lasers (QD PhC-VCSELs) for fiber-optic applications. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (< 1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. Near-field images of the PhC-VCSELs were also measured and studied.
URI: http://hdl.handle.net/11536/9808
http://dx.doi.org/10.1080/09500340701576288
ISSN: 0950-0340
DOI: 10.1080/09500340701576288
期刊: JOURNAL OF MODERN OPTICS
Volume: 55
Issue: 6
起始頁: 1013
結束頁: 1021
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