標題: Raman scattering in ternary AlAsxSb1-x films
作者: Lin, HC
Ou, J
Hsu, CH
Chen, WK
Lee, MC
電子物理學系
Department of Electrophysics
關鍵字: semiconductors;thin films;optical properties;phonons
公開日期: 1998
摘要: Thin films of the ternary AlAsxSb1-x alloys, prepared by metalorganic chemical vapor deposition, were studied by Raman scattering. The Raman shifts show one-mode behavior and the forbidden TO phonon scattering is observable due to the relaxed selection rule. Our results of the mixed compounds can be interpreted using the spatial correlation model. Moreover, the enhanced scattering was observed at 2.15 and 2.8 eV which are attributable to the E-0 and E-1 transitions of AlAs and AlSb. (C) 1998 Elsevier Science Ltd. All rights reserved.
URI: http://hdl.handle.net/11536/98
ISSN: 0038-1098
期刊: SOLID STATE COMMUNICATIONS
Volume: 107
Issue: 10
起始頁: 547
結束頁: 551
顯示於類別:期刊論文


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  1. 000075136100006.pdf