Title: Tungsten oxide/tungsten nanocrystals for nonvolatile memory devices
Authors: Chen, C. H.
Chang, T. C.
Liao, I. H.
Xi, P. B.
Hsieh, Joe
Chen, Jason
Huang, Tensor
Sze, S. M.
Chen, U. S.
Chen, J. R.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 7-Jan-2008
Abstract: In this work, the fabrication of WO(3)/W nanocrystals for nonvolatile memory devices has been achieved via rapid thermal oxidation of tungsten silicide. Amorphous Si and WSi(x) (x=2.7) layers were deposited onto the tunneling oxide and sequentially oxidized to form well-shaped WO(3)/W nanocrystals. The mean size of WO(3)/W nanocrystals is similar to 8.4 nm, while density is similar to 1.57x10(11) cm(-2). Moreover, the nonvolatile memory device for WO(3)/W nanocrystals exhibits similar to 0.53 V threshold voltage shift under 1 V/(-5 V) operation. The sample without capping a-Si layer was also fabricated for comparison. By material analyses, reasonable formation mechanisms are proposed in this letter. (C) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2822401
http://hdl.handle.net/11536/9773
ISSN: 0003-6951
DOI: 10.1063/1.2822401
Journal: APPLIED PHYSICS LETTERS
Volume: 92
Issue: 1
End Page: 
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