Title: Compact CPW-MS-CPW two-stage pHEMT amplifier compatible with flip chip technique in V-band frequencies
Authors: Su, Jen-Yi
Meng, Chinchun
Lee, Yueh-Ting
Huang, Guo-Wei
電信工程研究所
Institute of Communications Engineering
Keywords: coplanar waveguide (CPW);flip-chip bonding;microstrip line (NIS);pseudomorphic high electron mobility transistor (pHEMT)
Issue Date: 1-Feb-2008
Abstract: The V-band coplanar waveguide (CPW)-microstrip line (MS)-CPW two-stage amplifier with the flip-chip bonding technique is demonstrated using 0.15 mu m AlGaAs/InGaAs pseudomorphic high electron mobility transistor technology. The CPW is used at input and output ports for flip-chip assemblies and the MS transmission line is employed in the interstage to reduce chip size. This two-stage amplifier employs transistors as the CPW-MS transition and the MS-CPW transition in the first stage and the second stage, respectively. The CPW-MS-CPW two-stage amplifier has a gain of 14.8 dB, input return loss of 10 dB and output return loss of 22 dB at 53.5 GHz. After the flip-chip bonding, the measured performances have almost the same value.
URI: http://dx.doi.org/10.1109/LMWC.2007.915097
http://hdl.handle.net/11536/9748
ISSN: 1531-1309
DOI: 10.1109/LMWC.2007.915097
Journal: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume: 18
Issue: 2
Begin Page: 112
End Page: 114
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