標題: Investigation of anomalous inversion C-V characteristics for long-channel MOSFETs with leaky dielectrics: Mechanisms and reconstruction
作者: Lee, Wei
Su, Pin
Su, Ke-Wei
Chiang, Chung-Shi
Liu, Sally
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: capacitance-voltage (C-V);intrinsic input resistance;metal-oxide-emiconductor (MOS) capacitance;MOSFET;ultrathin gate oxide
公開日期: 1-二月-2008
摘要: This paper investigates anomalous inversion capacitance-voltage (C-V) attenuation for MOSFETs with leaky dielectrics. We propose to reconstruct the inversion C-V characteristic based on long-channel MOSFETs using the concept of intrinsic input resistance (R-ii). The concept of R-ii has been validated by segmented BSIM4/SPICE simulation. Our reconstructed C-V characteristics show poly-depletion effects, which are not visible in the two-frequency three-element method and agree well with the North Carolina State University-CVC simulation results. The intrinsic input resistance dominates the overall gate-current-induced debiasing effect (similar to 95% for L = 20 mu m) and can be extracted directly from the I-V characteristics. Due to its simplicity, our proposed R-ii approach may provide an option for regular process monitoring purposes.
URI: http://dx.doi.org/10.1109/TSM.2007.914374
http://hdl.handle.net/11536/9747
ISSN: 0894-6507
DOI: 10.1109/TSM.2007.914374
期刊: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume: 21
Issue: 1
起始頁: 104
結束頁: 109
顯示於類別:期刊論文


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  1. 000253101700013.pdf