標題: Characteristics of PBTI and hot carrier stress for LTPS-TFT with high-kappa gate dielectric
作者: Ma, Ming-Wen
Chen, Chih-Yang
Su, Chun-Jung
Wu, Woei-Cherng
Wu, Yi-Hong
Kao, Kuo-Hsing
Chao, Tien-Sheng
Lei, Tan-Fu
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: high-kappa;hot carrier stress (HCS);low-temperature poly-Si thin-film transistors (LTPS-TFTs);positive bias temperature instability (PBTI)
公開日期: 1-Feb-2008
摘要: In this letter, the characteristics of positive bias temperature instability (PBTI) and hot carrier stress (HCS) for the low-temperature poly-Si thin-film transistors (LTPS-TFTs) with HfO2 gate dielectric are well investigated for the first time. Under room temperature stress condition, the PBTI shows a more serious degradation than does HCS, indicating that the gate bias stress would dominate the hot carrier degradation behavior for HfO2 LTPS-TFT. In addition, an abnormal behavior of the I-min degradation with different drain bias stress under high-temperature stress condition is also observed and identified in this letter. The degradation of device's performance under high-temperature stress condition can be attributed to the damages of both the HfO2 gate dielectric and the poly-Si grain boundaries.
URI: http://dx.doi.org/10.1109/LED.2007.914091
http://hdl.handle.net/11536/9744
ISSN: 0741-3106
DOI: 10.1109/LED.2007.914091
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 2
起始頁: 171
結束頁: 173
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