Title: Comparison of GaInP/GaAs HBT RFDs with resistive loads and shunt-shunt feedback active loads
Authors: Wei, Hung-Ju
Meng, Chinchun
Chang, Yuwen
Huang, Guo-Wei
電信工程研究所
Institute of Communications Engineering
Keywords: regenerative frequency divider (RFD);GaInP/GaAs HBT;shunt-shunt feedback active load;resistive load;double-balanced mixer
Issue Date: 1-Feb-2008
Abstract: An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated from 4 to 26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active loading type obviously has wider operating frequency and lower input sensitivity. The f(max)/f(min), ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7 mW at the supply voltage of 5 V The chip size is 1.0 x 1.0 mm(2). (c) 2007 Wiley Periodicals, Inc.
URI: http://dx.doi.org/10.1002/mop.23096
http://hdl.handle.net/11536/9741
ISSN: 0895-2477
DOI: 10.1002/mop.23096
Journal: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume: 50
Issue: 2
Begin Page: 433
End Page: 435
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