標題: Cross-sectional transmission electron microscopy observations of structural damage in Al(0.16)Ga(0.84)N thin film under contact loading
作者: Jian, Sheng-Rui
Juang, Jenh-Yih
Lai, Yi-Shao
電子物理學系
Department of Electrophysics
公開日期: 1-Feb-2008
摘要: This article reports a nanomechanical response study of the contact-induced deformation behavior in Al(0.16)Ga(0.84)N thin film by means of a combination of nanoindentation and the cross-sectional transmission electron microscopy (XTEM) techniques. Al(0.16)Ga(0.84)N thin film is deposited by using the metal-organic chemical vapor deposition method. Hardness and Young's modulus of the Al(0.16)Ga(0.84)N films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements mode. The obtained values of the hardness and Young's modulus are 19.76 +/- 0.15 and 310.63 +/- 9.41 GPa, respectively. The XTEM images taken in the vicinity just underneath the indenter tip revealed that the multiple "pop-ins" observed in the load-displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of the load-displacement curve suggests that no pressure-induced phase transition was involved. (c) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2836939
http://hdl.handle.net/11536/9737
ISSN: 0021-8979
DOI: 10.1063/1.2836939
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 103
Issue: 3
結束頁: 
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