標題: Probing a nonuniform two-dimensional electron gas with random telegraph signals
作者: Chen, Ming-Jer
Lee, Chien-Chih
Lu, Ming-Pei
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Feb-2008
摘要: We observe a sequence of two-level random telegraph signals (RTSs) in the drain/source current of a 1.7 nm gate oxide silicon metal-oxide-semiconductor field-effect transistor. The RTS magnitude is transformed into the apparent Debye length around a negatively charged oxide trap. We achieve excellent reproduction of the Debye data (40 down to 5 nm). This leads to the quantified area spanned by the dominant conductive percolation paths in the underlying two-dimensional electron gas (2DEG). We find that most of the 2DEG in inversion is recovered in a largest threshold voltage sample (similar to 0.35 V), while for the lowest threshold (similar to 0.15 V), a certain conductive filament is likely to occur. The gate direct tunneling current further corroborates the percolation picture. (c) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2841725
http://hdl.handle.net/11536/9736
ISSN: 0021-8979
DOI: 10.1063/1.2841725
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 103
Issue: 3
結束頁: 
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