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dc.contributor.authorMa, Ming-Wenen_US
dc.contributor.authorChen, Chih-Yangen_US
dc.contributor.authorSu, Chun-Jungen_US
dc.contributor.authorWu, Woei-Cherngen_US
dc.contributor.authorWu, Yi-Hongen_US
dc.contributor.authorYang, Tsung-Yuen_US
dc.contributor.authorKao, Kuo-Hsingen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.date.accessioned2014-12-08T15:12:39Z-
dc.date.available2014-12-08T15:12:39Z-
dc.date.issued2008-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2007.914071en_US
dc.identifier.urihttp://hdl.handle.net/11536/9720-
dc.description.abstractIn this letter, fluorine ion implantation with low-temperature solid-phase crystallized activation scheme is used to obtain a high-performance HfO2 low-temperature poly-Si thin-film transistor (LTPS-TFT) for the first time. The secondary ion mass spectrometer (SIMS) analysis shows a different fluorine profile compared to that annealed at high temperature. About one order current reduction of I-min is achieved because 25% grain-boundary traps are passivated by fluorine implantation. In addition, the threshold voltage instability of hot carrier stress is also improved with the introduction of fluorine. The LTPS-TFT with HfO2 gate dielectric and fluorine preimplantation can simultaneously achieve low V-TH similar to 1.32 V, excellent subthreshold swing similar to 0.141 V/dec, and high I-ON/I-min current ratio 1.98 x 10(7).en_US
dc.language.isoen_USen_US
dc.subjectfluorine implantationen_US
dc.subjecthigh-kappaen_US
dc.subjecthot carrier stressen_US
dc.subjectlow-temperature poly-Si thin-film transistors (LTPS-TFTs)en_US
dc.titleImpacts of fluorine ion implantation with low-temperature solid-phase crystallized activation on high-kappa LTPS-TFTen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2007.914071en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume29en_US
dc.citation.issue2en_US
dc.citation.spage168en_US
dc.citation.epage170en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000252622800011-
dc.citation.woscount5-
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