標題: Impacts of fluorine ion implantation with low-temperature solid-phase crystallized activation on high-kappa LTPS-TFT
作者: Ma, Ming-Wen
Chen, Chih-Yang
Su, Chun-Jung
Wu, Woei-Cherng
Wu, Yi-Hong
Yang, Tsung-Yu
Kao, Kuo-Hsing
Chao, Tien-Sheng
Lei, Tan-Fu
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: fluorine implantation;high-kappa;hot carrier stress;low-temperature poly-Si thin-film transistors (LTPS-TFTs)
公開日期: 1-Feb-2008
摘要: In this letter, fluorine ion implantation with low-temperature solid-phase crystallized activation scheme is used to obtain a high-performance HfO2 low-temperature poly-Si thin-film transistor (LTPS-TFT) for the first time. The secondary ion mass spectrometer (SIMS) analysis shows a different fluorine profile compared to that annealed at high temperature. About one order current reduction of I-min is achieved because 25% grain-boundary traps are passivated by fluorine implantation. In addition, the threshold voltage instability of hot carrier stress is also improved with the introduction of fluorine. The LTPS-TFT with HfO2 gate dielectric and fluorine preimplantation can simultaneously achieve low V-TH similar to 1.32 V, excellent subthreshold swing similar to 0.141 V/dec, and high I-ON/I-min current ratio 1.98 x 10(7).
URI: http://dx.doi.org/10.1109/LED.2007.914071
http://hdl.handle.net/11536/9720
ISSN: 0741-3106
DOI: 10.1109/LED.2007.914071
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 2
起始頁: 168
結束頁: 170
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