標題: Analysis of negative bias temperature instability in body-tied low-temperature polycrystalline silicon thin-film transistors
作者: Chen, Chih-Yang
Ma, Ming-Wen
Chen, Wei-Cheng
Lin, Hsiao-Yi
Yeh, Kuan-Lin
Wang, Shen-De
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: charge-pumping (CP) technique;low-temperature polycrystalline silicon thin-film transistors (LTPS;TFTs);negative bias temperature instability (NBTI)
公開日期: 1-二月-2008
摘要: Negative bias temperature instability (NBTI) degradation mechanism in body-tied low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) is analyzed by the charge-pumping (CP) technique. The properties of bulk trap states (including interface and grain boundary trap states) are directly characterized from the CP current. The increase of the fixed oxide charges is also extracted, which has not been quantified in previous studies of NBTI degradation in LTPS TFTs. The experimental results confirm that the NBTI degradation in LTPS TFTs is caused by the generation of bulk trap states and oxide trap states.
URI: http://dx.doi.org/10.1109/LED.2007.914083
http://hdl.handle.net/11536/9719
ISSN: 0741-3106
DOI: 10.1109/LED.2007.914083
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 2
起始頁: 165
結束頁: 167
顯示於類別:期刊論文


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  1. 000252622800010.pdf