標題: Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals
作者: Chen, Wei-Ren
Chang, Ting-Chang
Yeh, Jui-Lung
Chang, Chun-Yen
Chen, Shih-Ching
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 11-二月-2008
摘要: The formation of Ni-Si and Ni-N nanocrystals by sputtering a Ni(0.3)Si(0.7) target in argon and nitrogen environment were proposed in this paper. A transmission electron microscope analysis shows the nanocrystals embedded in the nitride layer. X-ray photoelectron spectroscopy and x-ray diffraction also offer the chemical material analysis of nanocrystals with surrounding dielectric and the crystallization of nanocrystals for different thermal annealing treatments. Nonvolatile Ni-Si nanocrystal memories reveal superior electrical characteristics for charge storage capacity and reliability due to the improvement of thermal annealing treatment. In addition, we used energy band diagrams to explain the significance of surrounding dielectric for reliability. (c) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2841049
http://hdl.handle.net/11536/9677
ISSN: 0003-6951
DOI: 10.1063/1.2841049
期刊: APPLIED PHYSICS LETTERS
Volume: 92
Issue: 6
結束頁: 
顯示於類別:期刊論文


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