標題: Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOS
作者: Chenga, P. L.
Liao, C. I.
Chien, C. C.
Yang, C. L.
Ting, S. F.
Jeng, L. S.
Huang, C. T.
Cheng, Osbert
Tzou, S. F.
Hsu, W. S.
交大名義發表
National Chiao Tung University
關鍵字: epitaxial growth;dislocations;surfaces;semiconductors
公開日期: 15-Feb-2008
摘要: Locally strained Si technology using embedded SiGe has been used to improve pMOSFET device performance through hole mobility enhancement. Embedded SiGe is achieved by selectively growing epitaxial SiGe film in recessed Si pMOSFET source and drain areas. Prior to selective SiGe epi growth, a thin layer of Si seed was employed to help nucleate following low-temperature selective SiGe epitaxial film in recessed. source and drain areas. In combination with pre-epi wet clean and low-temperature chemical bake, use of Si seed resulted in improved SiGe film morphology and micro-loading effect, and further improved device performance. (c) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.matchemphys.2007.08.020
http://hdl.handle.net/11536/9675
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2007.08.020
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 107
Issue: 2-3
起始頁: 471
結束頁: 475
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