標題: Growth of a-plane ZnO thin films on LaAlO3(100) substrate by metal-organic chemical vapor deposition
作者: Tian, Jr-Sheng
Liang, Mel-Hui
Ho, Yen-Teng
Liu, Yuan-An
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: high resolution x-ray diffraction;metalorganic chemical vapor deposition;oxides;semiconducting II-VI materials
公開日期: 15-二月-2008
摘要: ZnO(1 1 (2) over bar 0) thin films were successfully grown on LaAlO3 (lanthanum aluminate) (10 0) substrate by atmospheric pressure metalorganic chemical vapor deposition. X-ray diffraction, atomic force microscopy, and scanning electron microscopy showed that ZnO films formed at 450 degrees C were composed of almost all (1 1 (2) over bar 0) oriented grains while (0 0 0 2) oriented ZnO grains started to appear at temperature above 550 degrees C. The a-plane ZnO films consisted of two types of domains with their c-axis perpendicular to each other due to LaAlO3(1 0 0) symmetry with low lattice mismatch along < 1 1 0 >. (C) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2007.11.073
http://hdl.handle.net/11536/9672
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2007.11.073
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 310
Issue: 4
起始頁: 777
結束頁: 782
顯示於類別:期刊論文


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  1. 000253650000007.pdf