|標題:||High-brightness InGaN-GaN flip-chip light-emitting diodes with triple-light scatteriny layers|
Department of Photonics
|關鍵字:||flip-chip light-emitting diodes (FC-LEDs);naturally textured p-GaN layer;patterned sapphire;sapphire textured layer;triple-light scattering layers|
|摘要:||The flip-chip light-emitting diodes (FC-LEDs) with triple-light scattering layers were investigated comprising a top surface sapphire textured layer, an interface patterned sapphire layer, and a bottom naturally textured p-GaN layer. Such triple-textured layers are useful for light extraction efficiency enhancement. The light output power of FC-LEDs was increased 60% (at 350-mA current injection). compared to that of conventional FC-LEDs by implementing the triple-light scattering layers.|
|期刊:||IEEE PHOTONICS TECHNOLOGY LETTERS|
|Appears in Collections:||Articles|
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.