標題: Circuit performance degradation of switched-capacitor circuit with bootstrapped technique due to gate-oxide overstress in a 130-nm CMOS process
作者: Chen, Jung-Sheng
Ker, Ming-Dou
電機學院
College of Electrical and Computer Engineering
關鍵字: gate-oxide reliability;sample-and-hold amplifier;dielectric breakdown;bootstrapped switch;switched-capacitor circuit
公開日期: 1-三月-2008
摘要: The MOS switch with bootstrapped technique is widely used in low-voltage switched-capacitor circuit. The switched-capacitor circuit with the bootstrapped technique could be a dangerous design approach in the nano-scale CMOS process due to the gate-oxide transient overstress. The impact of gate-oxide transient overstress on MOS switch in switched-capacitor circuit is investigated in this work with the sample-and-hold amplifier (SHA) in a 130-nm CMOS process. After overstress on the MOS switch of SHA with unity-gain buffer, the circuit performances in time domain and frequency domain are measured to verify the impact of gate-oxide reliability on circuit performances. The oxide breakdown on switch device degrades the circuit performance of bootstrapped switch technique.
URI: http://dx.doi.org/10.1093/ietele/e91-c.3.378
http://hdl.handle.net/11536/9593
ISSN: 0916-8524
DOI: 10.1093/ietele/e91-c.3.378
期刊: IEICE TRANSACTIONS ON ELECTRONICS
Volume: E91C
Issue: 3
起始頁: 378
結束頁: 384
顯示於類別:期刊論文


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  1. 000254605600017.pdf