標題: Polymer hot-carrier transistor with low bandgap emitter
作者: Chao, Yu-Chiang
Xie, Ming-Hong
Dai, Ming-Zhi
Meng, Hsin-Fei
Horng, Sheng-Fu
Hsu, Chain-Shu
物理研究所
Institute of Physics
公開日期: 3-Mar-2008
摘要: Vertical polymer hot-carrier transistor using the low bandgap material poly(3-hexylthiophene) as both the emitter and the collector are studied. The common emitter current gain is shown to depend on the LiF thickness and the emitter thickness, with maximal value at 31. Current density as high as 31 mA/cm(2) is achieved when collector voltage is -10 V. For the device using blend of poly(3-hexylthiophene) and high bandgap polymer poly(9-vinylcarbazole) as the emitter, the current density rises sharply to 428 mA/cm(2). The brightness of 3000 cd/m(2) is obtained as a polymer light-emitting diode is driven by the transistor with the same area. The transistor can be operated at 100 kHz. (c) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2839395
http://hdl.handle.net/11536/9583
ISSN: 0003-6951
DOI: 10.1063/1.2839395
期刊: APPLIED PHYSICS LETTERS
Volume: 92
Issue: 9
結束頁: 
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