標題: Anomalous p-channel amorphous oxide transistors based on tin oxide and their complementary circuits
作者: Ou, Chun-Wei
Ho, Zhong Yo
Chuang, You-Che
Cheng, Shiau-Shin
Wu, Meng-Chyi
Ho, Kuo-Chuan
Chu, Chih-Wei
光電工程學系
Department of Photonics
公開日期: 24-Mar-2008
摘要: In this article, we report the fabrication of SnO(2) thin film transistors (TFTs) fabricated by reactive evaporation. Different from the previous reports, the fabricated TFTs exhibit p-type conductivity in its undoped form. The postdeposition annealing temperature was tuned to achieve p-channel SnO(2) TFTs. The on/ off ratio and the field-effect mobility were similar to 10(3) and 0.011 cm(2)/V s, respectively. To demonstrate inverter circuit, two devices with different threshold voltages were combined and an output gain of 2.8 was achieved. The realization of p-channel oxide TFTs would open up new challenges in the area of transparent electronics. (C) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2898217
http://hdl.handle.net/11536/9558
ISSN: 0003-6951
DOI: 10.1063/1.2898217
期刊: APPLIED PHYSICS LETTERS
Volume: 92
Issue: 12
結束頁: 
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