標題: Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology
作者: Tu, Chun-Hao
Chang, Ting-Chang
Liu, Po-Tsun
Yang, Che-Yu
Feng, Li-Wei
Wu, Yung-Chun
Sze, Simon M.
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: poly-Si TFTs;fluorine;excimer laser crystallization
公開日期: 31-Mar-2008
摘要: Polycrystalline silicon thin film transistors (poly-Si TFTs) with the ion implantation of fluorine elements were investigated in this study. The electrical performance and reliability were reported comprehensively. Experimental work has shown the electrical characteristics of excimer laser crystallized F-ions-implanted poly-Si TFTs are improved effectively, especially for field effect mobility. It is also found that the fluorine piled up at the poly-Si interface during thermal annealing, for the TFT fabricated without a prior deposition of pad oxide. The stronger Si-F bonds replace the Si-Si/Si-H, leading to the superior electrical reliability. However, the dose of F ions is critical in poly-Si, or the electrical characteristics of TFT devices will be degraded. (c) 2007 Published by Elsevier B.V.
URI: http://dx.doi.org/10.1016/j.tsf.2007.08.038
http://hdl.handle.net/11536/9552
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2007.08.038
期刊: THIN SOLID FILMS
Volume: 516
Issue: 10
起始頁: 3128
結束頁: 3132
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