Title: 有機金屬氣相磊晶法成長砷化銦鎵與砷化銦量子點特性研究
Study the Characteristics of InGaAs and InAs Quantum Dots Grown by MOCVD
Authors: 李威儀
LEE WEI-I
國立交通大學電子物理學系
Keywords: 砷化銦鎵;砷化銦;量子點;有機金屬氣相磊晶法;InGaAs;InAs;Quantum dot;MOCVD
Issue Date: 2001
Gov't Doc #: NSC90-2112-M009-041
URI: http://hdl.handle.net/11536/95476
https://www.grb.gov.tw/search/planDetail?id=639680&docId=119712
Appears in Collections:Research Plans


Files in This Item:

  1. 902112M009041.pdf
  2. 902112M009041.pdf