標題: Huge positive magnetoresistance in a gated AlGaAs/GaAs high electron mobility transistor structure at high temperatures
作者: Liang, C. -T.
Tseng, Yen Shung
Wu, Jau-Yang
Lin, Sheng-Di
Yang, Chun-Kai
Li, Yu-Ru
Chen, Kuang Yao
Lin, Po-Tsun
Lin, Li-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 31-Mar-2008
摘要: Magnetoresistivity measurements on a gated AlGaAs/GaAs high electron mobility transistor (HEMT) structure were performed at high temperatures T. By changing the applied gate voltage V(g), we can investigate the observed huge positive magnetoresistance (PMR) at different effective disorder and density inhomogeneity within the same HEMT structure. The observed PMR value increases with increasing disorder in the depletion mode (V(g)<= 0). Moreover, the PMR value is not limited by the quality of the HEMT structure at T=80 K. Such results pave the way for low-cost, high-throughput GaAs-based HEMT fabrication for future magnetic sensing and recording devices fully compatible with the mature HEMT technology. (C) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2906360
http://hdl.handle.net/11536/9546
ISSN: 0003-6951
DOI: 10.1063/1.2906360
期刊: APPLIED PHYSICS LETTERS
Volume: 92
Issue: 13
結束頁: 
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