標題: Investigations on highly stable thermal characteristics of a dilute In(0.2)Ga(0.8)AsSb/GaAs doped-channel field-effect transistor
作者: Su, Ke-Hua
Hsu, Wei-Chou
Lee, Ching-Sung
Hu, Po-Jung
Wu, Yue-Han
Chang, Li
Hsiao, Ru-Shang
Chen, Jenn-Fang
Chi, Tung-Wei
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
公開日期: 1-四月-2008
摘要: This work reports for the first time a novel In(0.2)Ga(0.8)AsSb/GaAs heterostructure doped-channel field-effect transistor (DCFET) grown by the molecular beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the DCFET device has been effectively improved by introducing surfactant-like Sb atoms during the growth of the Si-doped InGaAs channel layer. The improved device characteristics include the peak extrinsic transconductance (g(m, max)) of 161.5 mS mm(-1), the peak drain-source saturation current density (IDSS, max) of 230 mA mm(-1), the gate-voltage swing (GVS) of 1.65 V, the cutoff frequency (f(T)) of 12.5 GHz and the maximum oscillation frequency (f(max)) of 25 GHz at 300 K with the gate dimensions of 1.2 x 200 mu m(2). The proposed design has also shown a stable thermal threshold coefficient (partial derivative V(th)/partial derivative T) of -0.7 mV K(-1).
URI: http://dx.doi.org/10.1088/0268-1242/23/4/045012
http://hdl.handle.net/11536/9539
ISSN: 0268-1242
DOI: 10.1088/0268-1242/23/4/045012
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 23
Issue: 4
結束頁: 
顯示於類別:期刊論文


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