標題: Investigation of random dopant fluctuation for multi-gate metal-oxide-semiconductor field-effect transistors using analytical solutions of three-dimensional Poisson's equation
作者: Wu, Yu-Sheng
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: multi-gate MOSFETs;FinFET;tri-gate;3-D Poisson's equation;random dopant fluctuation
公開日期: 1-Apr-2008
摘要: This paper investigates the random dopant fluctuation of multi-gate metal-oxide-semi conductor field-effect transistors (MOSFETs) using analytical solutions of three-dimensional (3D) Poisson's equation verified with device simulation. Especially, we analyze the impact of aspect ratio on the random dopant fluctuation in multi-gate devices. Our study indicates that with a given total width, lightly doped fin-type FET (FinFET) shows the smallest threshold voltage (V(th)) dispersion because of its smaller Vth sensitivity to the channel doping. For heavily doped devices, quasi-planar shows smaller V(th) dispersion because of its larger volume. The Vth dispersion caused by random dopant fluctuation may still be significant in the lightly doped channel, especially for tri-gate and quasi-planar devices.
URI: http://dx.doi.org/10.1143/JJAP.47.2097
http://hdl.handle.net/11536/9530
ISSN: 0021-4922
DOI: 10.1143/JJAP.47.2097
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 47
Issue: 4
起始頁: 2097
結束頁: 2102
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