標題: Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al(2)O(3) gate dielectric on GaAs substrate
作者: Cheng, Chao-Ching
Chien, Chao-Hsin
Luo, Guang-Li
Yang, Chun-Hui
Chang, Ching-Chih
Chang, Chun-Yen
Kei, Chi-Chung
Hsiao, Chien-Nan
Perng, Tsong-Pyng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Apr-2008
摘要: In this study we investigated the interfacial chemistry occurring between an atomic-layer-deposited Al(2)O(3) high-k film and a GaAs substrate and the impact of sulfidization and thermal annealing on the properties of the resultant capacitor. We observed that sulfide passivation of the Al(2)O(3)/GaAs structure improved the effect of Fermi level pinning on the electrical characteristics, thereby providing a higher oxide capacitance, smaller frequency dispersion, and reduced surface states, as well as decreased interfacial charge trapping and gate leakage currents. Photoemission analysis indicated that the (NH(4))(2)S-treated GaAs improved the quality of the as-deposited Al(2)O(3) thin film and preserved the stoichiometry of the dielectric during subsequent high-temperature annealing. This behavior was closely correlated to the diminution of GaAs native oxides and elemental arsenic defects and their unwanted diffusion. In addition, thermal processing under an O(2) atmosphere, relative to that under N(2), decreased the thickness of the Al(2)O(3) gate dielectric and relieved the gate leakage degradation induced by metallic arsenic; as a result, superior dielectric reliability was attained. We discuss the underlying thermochemical reactions that account for these experimental observations. (C) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2901167
http://hdl.handle.net/11536/9527
ISSN: 0021-8979
DOI: 10.1063/1.2901167
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 103
Issue: 7
結束頁: 
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