Title: A novel electrically tunable RF inductor with ultra-low power consumption
Authors: Cho, Ming-Hsiang
Wu, Lin-Kun
電信工程研究所
Institute of Communications Engineering
Keywords: eddy current;inductor;metal oxide semiconductor field effect transistor (MOSFET);radio frequency (RF);silicon;tunable
Issue Date: 1-Apr-2008
Abstract: In this study, we propose for the first time an electrically and continuously tunable RF inductor using grounded metal oxide semiconductor (MOS) transistor as a control device. By adjusting the output resistance of the grounded MOSFET, the ground-return current can lead to a significant variation in series inductance. This proposed inductor structure was implemented in a standard CMOS process and characterized up to 30 GHz, which demonstrates maximum inductance variations of 32% and 58% at 5.8 and 18 GHz, respectively. The dc power consumption of the proposed design is kept within 50 mu W over the entire tuning range.
URI: http://dx.doi.org/10.1109/LMWC.2008.918878
http://hdl.handle.net/11536/9516
ISSN: 1531-1309
DOI: 10.1109/LMWC.2008.918878
Journal: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume: 18
Issue: 4
Begin Page: 242
End Page: 244
Appears in Collections:Articles


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