Title: Small GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrate
Authors: Lee, Y. C.
Lee, C. E.
Lu, T. C.
Kuo, H. C.
Wang, S. C.
Department of Photonics
Issue Date: 1-Apr-2008
Abstract: Small-scale GaN-based LEDs with a single electrode pad enjoying such properties as low cost, low series resistance, high efficiency and high yield were fabricated on a sapphire substrate by a novel and simple method. The devices present not only lower series resistance but higher light output power due to a specific n-contact design and better current spreading properties. Furthermore, higher ESD resistance (> -800 V at machine-mode operation) was demonstrated. The single-pad electrode of small-scale GaN-based LEDs has a chip size of 180 x 180 mu m(2), and showed a lower forward voltage of 3.15 V and 53.4% output power enhancement at 20 mA.
URI: http://dx.doi.org/10.1088/0268-1242/23/4/045013
ISSN: 0268-1242
DOI: 10.1088/0268-1242/23/4/045013
Volume: 23
Issue: 4
End Page: 
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