Title: Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography
Authors: Huang, H. W.
Lin, C. H.
Yu, C. C.
Lee, B. D.
Chiu, C. H.
Lai, C. F.
Kuo, H. C.
Leung, K. M.
Lu, T. C.
Wang, S. C.
Department of Photonics
Issue Date: 1-Apr-2008
Abstract: The enhancement of light extraction of gallium nitride (GaN)-based power chip (PC) light-emitting diodes (LEDs) with a p-GaN rough surface by nanoimprint lithography (NIL) is presented. At a driving current of 350 mA and a chip size of 1 mm x 1 mm, the light output power of the PC LEDs with a p-GaN rough surface (etching depth from 130 to 150 nm) showed an enhancement of 24% on wafer when compared with the same device without NIL. Current-voltage results indicated an ohmic contact by the increase in the contact area of the nano-roughened surface at 200 mA. This paper offers a promising potential for enhancing the output powers of commercial LEDs.
URI: http://dx.doi.org/10.1088/0268-1242/23/4/045022
ISSN: 0268-1242
DOI: 10.1088/0268-1242/23/4/045022
Volume: 23
Issue: 4
End Page: 
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