標題: 遠距電漿輔助及垂直型二硫式氮化鎵磊晶表面反應之分析與研究
Studies of Surface Reactions in GaN Growths in a Two-Flow Vertical Reactor and in a Remote Plasma-Enhanced Deposition System
作者: 李威儀
LEE WEI-I
交通大學電子物理系
關鍵字: 氮化鎵;垂直型二流式磊晶系統;遠距電漿輔助磊晶;GaN;Vertical-type two-flow reactor;Plasma-enhanced deposition
公開日期: 1998
官方說明文件#: NSC87-2112-M009-005
URI: http://hdl.handle.net/11536/94882
https://www.grb.gov.tw/search/planDetail?id=369933&docId=66430
Appears in Collections:Research Plans


Files in This Item:

  1. 872112M009005.pdf