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dc.contributor.authorChu, Chih-Weien_US
dc.contributor.authorSung, Chao-Fengen_US
dc.contributor.authorLee, Yuh-Zhengen_US
dc.contributor.authorCheng, Kevinen_US
dc.date.accessioned2014-12-08T15:12:19Z-
dc.date.available2014-12-08T15:12:19Z-
dc.date.issued2008-04-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2007.11.008en_US
dc.identifier.urihttp://hdl.handle.net/11536/9475-
dc.description.abstractWe demonstrate that the electrical properties of n-channel thin film transistors can be enhanced by inserting a nanoscale interfacial layer, namely, cesium carbonate (Cs2CO3) between organic semiconductor and source/drain electrodes. Devices with the Cs2CO3/Al electrode showed a reduction of contact resistance, not only with respect to Al, but also compared to Ca. The improvement is attributed to the reduction in the energy barrier of electron injection and the prevention of unfavorable chemical interaction between the organic layer and the metal electrode. High field-effect mobility of 0.045 cm (2)/V s and on/off current ratios of 10(6) were obtained in the [6,6]-phenyl C60 butyric acid methyl ester-based organic thin film transistors using the Cs2CO3/Al electrodes at a gate bias of 40 V. (c) 2007 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectn-typeen_US
dc.subjectorganic thin film transistorsen_US
dc.subjectnanoscale interface modificationen_US
dc.titleImproved performance in n-channel organic thin film transistors by nanoscale interface modificationen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2007.11.008en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume9en_US
dc.citation.issue2en_US
dc.citation.spage262en_US
dc.citation.epage266en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000255111900013-
dc.citation.woscount13-
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