標題: Improved performance in n-channel organic thin film transistors by nanoscale interface modification
作者: Chu, Chih-Wei
Sung, Chao-Feng
Lee, Yuh-Zheng
Cheng, Kevin
光電工程學系
Department of Photonics
關鍵字: n-type;organic thin film transistors;nanoscale interface modification
公開日期: 1-Apr-2008
摘要: We demonstrate that the electrical properties of n-channel thin film transistors can be enhanced by inserting a nanoscale interfacial layer, namely, cesium carbonate (Cs2CO3) between organic semiconductor and source/drain electrodes. Devices with the Cs2CO3/Al electrode showed a reduction of contact resistance, not only with respect to Al, but also compared to Ca. The improvement is attributed to the reduction in the energy barrier of electron injection and the prevention of unfavorable chemical interaction between the organic layer and the metal electrode. High field-effect mobility of 0.045 cm (2)/V s and on/off current ratios of 10(6) were obtained in the [6,6]-phenyl C60 butyric acid methyl ester-based organic thin film transistors using the Cs2CO3/Al electrodes at a gate bias of 40 V. (c) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2007.11.008
http://hdl.handle.net/11536/9475
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2007.11.008
期刊: ORGANIC ELECTRONICS
Volume: 9
Issue: 2
起始頁: 262
結束頁: 266
Appears in Collections:Articles


Files in This Item:

  1. 000255111900013.pdf