標題: CW lasing of current injection blue GaN-based vertical cavity surface emitting laser
作者: Lu, Tien-Chang
Kao, Chih-Chiang
Kuo, Hao-Chung
Huang, Gen-Sheng
Wang, Shing-Chung
光電工程學系
Department of Photonics
公開日期: 7-Apr-2008
摘要: Here, we report the cw laser operation of electrically pumped GaN-based vertical cavity surface emitting laser (VCSEL). The GaN-based VCSEL has a ten-pair InGaN/GaN multiple quantum well active layer embedded in a GaN hybrid microcavity of 5 lambda optical thickness with two high reflectivity mirrors provided by an epitaxially grown AlN/GaN distributed Bragg reflector (DBR) and a Ta(2)O(5)/SiO(2) dielectric DBR. cw laser action was achieved at a threshold injection current of 1.4 mA at 77 K. The laser emitted a blue wavelength at 462 nm with a narrow linewidth of about 0.15 nm. The laser beam has a divergence angle of about 11.7 degrees with a polarization ratio of 80%. A very strong spontaneous coupling efficiency of 7.5x10(-2) was measured. (C) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2908034
http://hdl.handle.net/11536/9466
ISSN: 0003-6951
DOI: 10.1063/1.2908034
期刊: APPLIED PHYSICS LETTERS
Volume: 92
Issue: 14
結束頁: 
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