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dc.contributor.authorLu, Hau-Yanen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorLi, Hung-Weien_US
dc.contributor.authorHu, Chin-Weien_US
dc.contributor.authorLin, Kun-Chinen_US
dc.contributor.authorWang, Chao-Chunen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorChi, Sienen_US
dc.date.accessioned2014-12-08T15:12:18Z-
dc.date.available2014-12-08T15:12:18Z-
dc.date.issued2008-04-14en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2912026en_US
dc.identifier.urihttp://hdl.handle.net/11536/9459-
dc.description.abstractThe technology of polycrystalline silicon thin-film transistors (poly-Si TFTs) with low photoleakage current is developed in this work. The electrical characteristics of poly-Si TFTs under illumination were significantly improved employing the NH(3) plasma treatment on the buffer layer, with no need for complicate device structure and additional masks. The trap states that originated from the plasma bombardment on the interface between the poly-Si layer and buffer oxide can effectively recombine the light-induced electron-hole pairs. The fewer residual electron-hole pairs lead to the lower photoleakage current and improved subthreshold swing, as well as maintaining good electrical characteristics in the dark sate. (C) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleReduction of photoleakage current in polycrystalline silicon thin-film transistor using NH(3) plasma treatment on buffer layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2912026en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume92en_US
dc.citation.issue15en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
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