標題: Reduction of photoleakage current in polycrystalline silicon thin-film transistor using NH(3) plasma treatment on buffer layer
作者: Lu, Hau-Yan
Chang, Ting-Chang
Liu, Po-Tsun
Li, Hung-Wei
Hu, Chin-Wei
Lin, Kun-Chin
Wang, Chao-Chun
Tai, Ya-Hsiang
Chi, Sien
光電工程學系
Department of Photonics
公開日期: 14-四月-2008
摘要: The technology of polycrystalline silicon thin-film transistors (poly-Si TFTs) with low photoleakage current is developed in this work. The electrical characteristics of poly-Si TFTs under illumination were significantly improved employing the NH(3) plasma treatment on the buffer layer, with no need for complicate device structure and additional masks. The trap states that originated from the plasma bombardment on the interface between the poly-Si layer and buffer oxide can effectively recombine the light-induced electron-hole pairs. The fewer residual electron-hole pairs lead to the lower photoleakage current and improved subthreshold swing, as well as maintaining good electrical characteristics in the dark sate. (C) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2912026
http://hdl.handle.net/11536/9459
ISSN: 0003-6951
DOI: 10.1063/1.2912026
期刊: APPLIED PHYSICS LETTERS
Volume: 92
Issue: 15
起始頁: 
結束頁: 
顯示於類別:期刊論文


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