標題: Ferroelectricity and negative temperature coefficient of resistance in pulsed-laser-deposited (Pb, Sr) TiO(3) films
作者: Wang, Jyh-Liang
Lai, Yi-Sheng
Liou, Sz-Chian
Tsai, Chun-Chien
Chiou, Bi-Shiou
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 21-Apr-2008
摘要: (Pb, Sr)TiO(3) films deposited on Pt/SiO(2)/Si substrates by pulsed-laser deposition (PLD) at 400 degrees C with oxygen pressures ranging from 50 to 200 mTorr have been investigated. The paraelectricity-to-ferroelectricity transition of films depends on the oxygen pressure during deposition. Films deposited at 200 mTorr exhibit paraelectric-like nature, whereas films deposited at lower pressures present the ferroelectric characteristic. The (Pb, Sr) TiO(3) film is found to exhibit a negative temperature coefficient of resistance (NTCR) at the measurement temperature ranging from 30 to 390 degrees C. This work demonstrates that the ferroelectricity/paraelectricity and the temperature coefficient of resistance of (Pb, Sr) TiO(3) films could be controlled by oxygen pressures during PLD.
URI: http://dx.doi.org/10.1088/0022-3727/41/8/085304
http://hdl.handle.net/11536/9446
ISSN: 0022-3727
DOI: 10.1088/0022-3727/41/8/085304
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 41
Issue: 8
結束頁: 
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