標題: 電漿製程天線效應對超薄閘氧化層電晶體特性影響之研究
Study of Plasma Antenna Effect in Ultrathin Gate Oxides
作者: 林鴻志
HORNG-CHIHLIN
國立交通大學毫微米實驗室
關鍵字: 天線效應;電漿製程;超薄閘;氧化層;充電損害;深次微米;光阻;灰化;Antenna effect;Plasma process;Ultrathin gate;Oxided layer;Charging damage;Deep submicrometer;Photo resistance;Ashing
公開日期: 1999
官方說明文件#: NSC88-2215-E317-005
URI: http://hdl.handle.net/11536/94383
https://www.grb.gov.tw/search/planDetail?id=428978&docId=76777
Appears in Collections:Research Plans


Files in This Item:

  1. 882215E317005.pdf