標題: Variation and mismatch effects of the low-temperature poly-Si TFTs on the circuit for the X-ray active matrix sensor
作者: Tai, Ya-Hsiang
Huang, Shih-Che
Su, Ko-Ching
Tseng, Chen-Yeh
顯示科技研究所
Institute of Display
關鍵字: charge sensitive amplifier;poly-Si TFTs;X-ray active matrix sensor
公開日期: 1-May-2008
摘要: The application of the capability of low-temperature poly-Si TFT circuits for high resolution X-ray active matrix sensor is explored. The integration of poly-Si TIFT circuits oil the glass enables an easy connection for the sensor array with fine pixel pitch. A novel charge sensitive amplifier circuit employing poly-Si TFTs is proposed for the readout system of the active matrix sensor. It can considerably increase the circuit's immunity to the unavoidable threshold voltage variations of the poly-Si TFTs.. The V-TH mismatch effect of the TFTs, which results in the offset voltage of the charge amplifier, can also be suppressed by the proposed circuit. However, the noise arisen from the V-TH mismatch can be even larger than that from the V-TH variation after compensation. It reflects that, for higher bit digital X-ray image sensors, the mismatch effect of the devices must be properly taken into consideration. (c) 2007 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2007.12.005
http://hdl.handle.net/11536/9428
ISSN: 0038-1101
DOI: 10.1016/j.sse.2007.12.005
期刊: SOLID-STATE ELECTRONICS
Volume: 52
Issue: 5
起始頁: 649
結束頁: 656
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