標題: Realization of ambipolar pentacene thin film transistors through dual interfacial engineering
作者: Yang, Chuan-Yi
Cheng, Shiau-Shin
Ou, Chun-Wei
Chuang, You-Che
Wu, Meng-Chyi
Dhananjay
Chu, Chih-Wei
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 1-May-2008
摘要: Ambipolar conduction of a pentacene-based field-effect transistor can be attributed to dual interface engineering, which occurs at the dielectric/semiconductor interface and electrode/semiconductor interface. While the former was realized by utilizing a hydroxyl-free gate dielectric, the latter was made feasible by the use of appropriate metal source and drain electrodes. The field-effect hole and electron mobilities of 0.026 and 0.0023 cm(2)/V s, respectively, were extracted from the transfer characteristics of pentacene organic field-effect transistors utilizing polymethyl methacrylate as the trap-reduction interfacial modified layer and Al as the source and drain (S/D) electrodes. We demonstrated a complementarylike inverter by using two identical ambipolar transistors and it can be operated both in the first and third quadrants with a high output voltage gain of around 10. (C) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2924425
http://hdl.handle.net/11536/9420
ISSN: 0021-8979
DOI: 10.1063/1.2924425
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 103
Issue: 9
結束頁: 
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