標題: Luminescent characteristics of ZnGa2O4:Mn phosphor thin films grown by radio-frequency magnetron sputtering
作者: Yu, CF
Lin, P
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: ZnGa2O4:Mn;phosphor;thin film;rf sputtering;energy transfer;luminescence
公開日期: 1-十一月-1996
摘要: Mn-doped ZnGa2O4 phosphor thin films on Si(100) were prepared by rf sputtering at 500 degrees C, Under UV light excitation, the deposited films showed a green emission band with a peak at 508 nm. Monitored at 508 nm, the excitation spectrum of the films showed a primary absorption at 245 nm. The spectra were similar to those of zinc gallate powder but with a larger band width. The films exhibited a high resistivity whether or not under the UV excitation. The possible energy transfer processes occurring in the material were discussed, and the resonance process was considered the dominant mechanism. From the spectral transmittance of undoped zinc gallate films sputtered on quartz glass, the evaluated indirect-transition optical gap was found to be 4.25 eV. The absorption by Ga3+ ions at 245 nm in the excitation spectrum was identified with the band-to-band transition of ZnGa2O4 host lattice.
URI: http://hdl.handle.net/11536/942
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 35
Issue: 11
起始頁: 5726
結束頁: 5729
顯示於類別:期刊論文


文件中的檔案:

  1. A1996VV24100030.pdf