標題: A phenomenological model for the reliability of GaAs based heterojunction bipolar transistors
作者: Lee, C. P.
Chau, F.
Lin, B.
Kretschmar, M.
Ma, W.
交大名義發表
National Chiao Tung University
公開日期: 1-五月-2008
摘要: We present a phenomenological model for the lifetime prediction of GaAs based heterojunction bipolar transistors (HBTs). Both thermal activation process and recombination enhanced defect generation process were considered phenomenologically. At high stress temperatures, the lifetime of the transistor is determined by the thermal activation process and is independent of the stress current. But at low stress temperatures, the device's lifetime is controlled by the recombination enhanced defect generation process and is dependent on the stress current. The model has been used to fit experimental data, and very reasonable agreement was obtained. The model is valid for all stress temperatures and stress currents. It provides a good guideline for projecting HBTs lifetimes using accelerated stress test. (C) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2917069
http://hdl.handle.net/11536/9418
ISSN: 0021-8979
DOI: 10.1063/1.2917069
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 103
Issue: 9
結束頁: 
顯示於類別:期刊論文


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